Chemical mechanical polishing of alumina

ABSTRACT

A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity &gt;30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size &gt;50 nm mixed with fumed oxide particles having average primary size &lt;25 nm, and (v) first oxide particles with a per surface area per unit mass &lt;100 m 2 /gm mixed with another oxide particle type having an average area per unit mass &gt;150 m 2 /gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

FIELD

Disclosed Embodiments relate to chemical mechanical polishing (CMP) andslurries for polishing aluminum oxide including sapphire.

BACKGROUND

Aluminum oxide (alumina) is a chemical compound including aluminum andoxygen with the chemical formula Al₂O₃. Corundum is a crystalline formof alumina, generally with traces of iron, titanium and chromium.Sapphire is a variety of corundum (α-Al₂O₃). Sapphire substrates areused for several applications including substrates for light emittingdiodes (LEDs), transparent windows for infrared (IR) and visiblewavelengths used in military imaging applications, and applications thatrequire high strength and good optical transmission.

SUMMARY

This Summary briefly indicates the nature and substance of thisDisclosure. It is submitted with the understanding that it will not beused to interpret or limit the scope or meaning of the claims.

Disclosed embodiments recognize there is a strong need to finish thesurface of alumina substrates such as sapphire with a low surfaceroughness, and minimize polishing-generated crystalline defects that mayoccur in the near-surface regions. For crystalline alumina substrates,such defects can give rise to several problems such as poor epitaxialgrowth, bending of the plates due to relaxation of surface stresses,and/or premature mechanical failure of the crystalline alumina plate.Disclosed embodiments provide slurries and chemical mechanical polishing(CMP) methods that provide alumina substrates having low surfaceroughness, low density of near-surface region polishing-generatedcrystalline defects, while providing a relatively high alumina polishingrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts an example slurry particle size distribution showing adisclosed polydispersity in particle size, according to an exampleembodiment.

FIG. 2 is a flow chart that shows steps in an example CMP method forpolishing an alumina surface of a substrate, according to an exampleembodiment.

DETAILED DESCRIPTION

Embodiments of the invention are described with reference to theattached figures, wherein like reference numerals are used throughoutthe figures to designate similar or equivalent elements. The figures arenot drawn to scale and they are provided merely to illustrate certainfeatures. Several aspects of this Disclosure are described below withreference to example applications for illustration.

It should be understood that numerous specific details, relationships,and methods are set forth to provide a full understanding of the subjectmatter in this Disclosure. One having ordinary skill in the relevantart, however, will readily recognize that embodiments of the inventioncan be practiced without one or more of the specific details or withother methods. In other instances, well-known structures or operationsare not shown in detail to avoid obscuring subject matter. Embodimentsof the invention are not limited by the illustrated ordering of acts orevents, as some acts may occur in different orders and/or concurrentlywith other acts or events. Furthermore, not all illustrated acts orevents are required to implement a methodology in accordance with thisDisclosure.

Notwithstanding that the numerical ranges and parameters setting forththe broad scope of this Disclosure are approximations, the numericalvalues set forth in the specific examples are reported as precisely aspossible. Any numerical value, however, inherently contains certainerrors necessarily resulting from the standard deviation found in theirrespective testing measurements. Moreover, all ranges disclosed hereinare to be understood to encompass any and all sub-ranges subsumedtherein. For example, a range of “less than 10” can include any and allsub-ranges between (and including) the minimum value of zero and themaximum value of 10, that is, any and all sub-ranges having a minimumvalue of equal to or greater than zero and a maximum value of equal toor less than 10, e.g., 1 to 5.

Disclosed embodiment relate to polishing of alumina surfaces ofsubstrates including sapphire and related substrates using a slurryhaving coated or mixed particle types. The total concentration ofparticles in the slurry can vary from 0.1 wt. % to 60 wt. %. The aluminasubstrates can be single crystal, or polycrystalline where the size ofthe polycrystalline grains can vary from 1 nm to 1 mm. The singlecrystal alumina can be a sapphire substrate generally having anyorientation, such as c-plane, a-plane, or r-plane, and can cut on-axisor be up to 20 degrees miscut from being on-axis. Also, disclosedembodiments include polishing other forms of alumina besides sapphireincluding sapphire doped with elements including transition metals suchas Fe, Ti, Cu, and/or can include nitrogen to provide aluminumoxynitride (AlON), where the N content can vary from 0.1 mole % to 40mole %.

The liquid phase of the slurry generally comprises a water phase. The pHof the slurry can be varied from 0.5 to 14.0, and more specifically frompH 6 to pH 13.0, such as from pH>7 to pH 12.0. In one embodiment theslurry particles include coated particles. To form coated particles forthe slurry, core particles of silica or alumina, or transition metaloxides such as titania can be used. The size of the core particles canvary from 1 nm to 5 μm. In a specific example the core particlescomprise silica, and the silica particle size can be varied from 10 nmto 500 nm, such as from 30 nm to 300 nm.

The coating on the core particles can be organic or inorganic with athickness varying from 0.2 nm (2 Å) to 5 μm, such as 1 nm to 1 μm. Theorganic materials can contain positively charged atoms as a part of itsconstituents. Examples of positively charged organic materials includenitrogen-based compounds such as amines. The organic coating can alsocomprise nitrogen-based organic compounds, ketones, organic acids, andsurfactants or surface active polymers. Such materials can be adsorbedto the particle surface in form of a monolayer, bilayer or multilayers.The organic coatings can be obtained by electrostatic interactions,hydrogen bonding or hydrophilic-hydrophilic interactions between thecore particles and the coated layer. Examples of nitrogen-basedcompounds includes amines, such as methyl amine, ethylamine, bicine,tricine, and azoles. Examples of organic acids include carboxylic (—COOHgroup) and sulphonic (SO₂OH group) including aliphatic and aromaticacids such as formic acid, acetic acid, lactic acid, citric acid, oxalicacid, uric acid, benzoic acid, tartaric acid, and amino acids.

Positively charged organic coatings on silica or other core particlesurfaces is recognized to provide several benefits during the polishingprocess. Due to having a positive charge the organic material can beabsorbed to negatively charged core particles such silica existing abovea pH of about 2.4 and alumina above a pH of about 9. The positivelycharged organic molecules on the particles can also increase theparticle's absorption to the negatively charged polishing pad. All theseabsorption effects are expected to increase the surface concentration ofparticles on the alumina substrate (e.g., sapphire) surface and on thepolishing pad, thereby increasing the polishing rate of sapphire andrelated alumina materials during the polishing process. The organiccoatings can also help in increasing the stability of the slurries suchas a silica slurry which tends to gel under pH conditions of 4 to 9under mild ionic strength. The concentration of organic additives can befrom 0.001 gm/liter to 100 gm/liter. If excess organic raw materials areadded to the slurry the organic material is generally present both as acoating as well as being dissolved in the liquid (e.g., water) phase.

As noted above the particle coating can also be an inorganic coating.The inorganic coating can be a transition metal compound coating on thecore particles. The inorganic coating such as a transition metalcompound coating can be present in addition to the organic coatingsdescribed above. The transition metal compound can comprise Ti, Fe, Mn,Cr, Cu, their oxides, nitrides or chlorides. The transition metal canhave a valence between 0, +1, +2, +3, or +4. As noted above, thethickness of the coating can generally vary from 0.2 nm (2 Å) to 5 μm.The concentration of coated particles in the slurry can vary from 0.01wt. % to 60 wt. %.

Disclosed transition metal compound coatings can assist polishing inseveral ways including increasing the alumina removal rate, reducing thefriction during polishing, and making the slurry more stable. Transitionmetal coatings can help to accelerate the reactions between the aluminaor alumina-like surface and the particle itself. For example, during thepolishing process, compounds such as spinels can be formed on thealumina surface. Spinels such a magnesium aluminum silicate, ironaluminum silicate, or manganese alumina silicate and their relatedcompounds can be formed. The formation of such compounds can increasethe alumina polishing rate and reduce the friction during polishing.

The use of coated particles can also improve the stability of theslurry. For example, as noted above, the core silica particle surface isrecognized to be susceptible to gelling. By coating the surface withtransition metal compounds the gelling rate can be significantlyreduced. Examples of the coatings that can decrease the gelling rateinclude transition metal compounds, such as Fe, Mn, Cu, Ti, Mg, Ce, orMn.

Another inorganic coating embodiment uses alkali metals belonging toGroup 1 (alkali metals) or Group II of the periodic table. Examples ofGroup I alkali metals include lithium, sodium, potassium, cesium, andGroup II metals include beryllium, magnesium, calcium, and barium. Suchcoatings can be formed by physical adsorption of the ions of therespective elements. As the particles are generally negatively charged,a compact layer of the alkali metal or Group 2 coating can be formed atpH greater than 6 for silica core particles that are negatively charged.The thickness of such coating is generally in the range of 0.1 nm to 5nm. By adding soluble salts of the Group I and Group II elements, suchcoatings can be formed. Example of soluble salts of Group I and Group IIincludes sulfates, silicates, carbonates, chlorides, nitrates, nitrides,phosphate, and bicarbonate. The concentration of salts can vary from 1ppm to 10 wt. %. Such coatings may help to decrease the friction duringthe alumina polishing process.

Disclosed mixed slurry particles can comprise 2 or more particle types,including different compositions such as silica mixed with one and moreother non-silica oxide particles such as alumina or titania, or 2 ormore particle types of same composition (e.g., silica) but havingdifferent size distributions, or 2 more particle types of samecomposition but having different shapes or fractal dimensions. Othermixed slurry particle types include 2 or more particle types of samecomposition but having different surface area or different porositydistributions, 2 or more particles types of same composition but madeusing different manufacturing processes leading to different structuralproperties characteristic for the respective manufacturing processes,such as, silica made from 2 or more of different inorganic precursorssuch as sodium silicate to form colloidal particles, a sol-gel processand a fumed process to form fumed oxide particles. Another mixedparticle type is the same composition but with one of the particle typeshaving different surface groups which can comprise in the case of silicaparticles different concentrations of silanol, silodoxane, vicinal orgerminal or organic groups thereon.

Colloidal silica particles are defined as particles made fromsilicate-based precursors such as sodium silicate and potassiumsilicate, with colloidal titania or colloidal alumina made from similarprecursors. Colloidal silica is known to have bound hydroxyl ions (011)which impart a negative charge under neutral pH conditions. Thecolloidal particles generally have D_(f) values between 2.6 to 3.0.

Sol-gel particles are defined as particles made from organic precursorssuch as tetraethyl ortho silicon (TEOS), or tetramethyl ortho silicon(TMOS) for silica. Both colloidal silica and sol-gel silica aremanufactured in liquid environments with maximum temperatures generallynot exceeding 200° C. The basic structure or morphology sol-gel silica(or sol-gel titania or alumina) solid phase can comprise discretecolloidal particles to continuous chain-like polymer networks. Disclosedembodiments utilize sol-gel derived discrete colloidal particles, whichas described above have characteristic loosely bound hydroxyl ions whichimpart a negative charge under neutral pH conditions. The sol-gelparticles generally have D_(f) values between 2.6 to 3.0.

Fumed silica is also known as pyrogenic silica because it is produced ina flame. Fumed silica are generally made from a vapor phase reaction byoxidation of silicon tetrachloride or related precursors. The processingtemperatures for fumed silica significantly exceeds 200° C., suchas >1,000° C. Fumed silica has a characteristic structure beingmicroscopic droplet shaped amorphous silica particles fused intobranched, chainlike, three-dimensional secondary particles which thenagglomerate into tertiary particles. The primary particle size for fumedsilica is generally 5 nm to 50 nm. Fumed silica particles havecharacteristic fractal dimension (Df) values generally ranging from 1.6to 2.6.

Colloidal silica and sol-gel silica, typically comprise individualprimary particles with loose agglomeration of primary particles. Theterm agglomeration refers to weak physical van der Waals bonding betweenthe particles. In contrast fumed particles comprise strongly chemicalbonded primary particles called aggregates as these process occurs athigh temperatures. These aggregates can form larger agglomerates by weakVan der Waals interaction between the aggregates. The primary particlesize of fumed silica, titania, or alumina or mixed products can rangefrom 2 nm to 150 nm, while the aggregate size can range from 50 nm to1,000 nm (1 micron), while the agglomerate size can range from 50 nm to5 microns. The surface area of the fumed particles can range from 30m²/gm to 500 m²/gm, while the porosity of the agglomerates can rangefrom 99.99% to 10% by volume.

The shape of the colloidal, sol-gel or fumed particles can be defined bytheir characteristic dimension D_(f) which is defined by:

N _(pp) =K′(d _(m) /d _(pp))D _(f)

where N_(pp) are the number of primary particles in the aggregate or theagglomerate, d_(m) is the maximum dimension of the aggregate, and d_(pp)is the average primary particle size of the aggregate. Similar analysiscan be applied to agglomerates. The value of D_(f) defines the shape andthe porosity of the aggregate or agglomerate. A value of D_(f) close to1.0 refers to a linear shaped aggregate/agglomerate, while a value of3.0 refers to a spherical shaped aggregate/agglomerate. D_(f) cangenerally have and any value between 1.0 and 3.0. Fumed oxide particleaggregates can have D_(f) values ranging from 1.5 to 2.6, whilecolloidal or sol-gel particles have agglomerates can have D_(f) valuesranging from 2.6 to 3.0.

In one embodiment the colloidal silica or sol-gel silica particles canbe mixed with fumed oxide particles, such as fumed oxide particleshaving Df values ranging from 1.3 to 2.6. The ratio of mixing ofcolloidal or sol-gel silica particles to fumed oxide particles can varyfrom 1000:1 to 1:100. The average primary particle size of the colloidalor sol-gel silica particles can vary from 5 nm to 500 nm, while theaverage primary size of the fumed oxide particles can vary from 1 nm to100 nm. The surface area of the colloidal silica or sol-gel silicaparticles can vary from 10 m²/gm to 500 m²/gm, while the surface area ofthe fumed particles can vary from 50 m²/gm to 600 m²/gm. Typically thesurface area of fumed oxide particles is higher by at least 10% than thesurface area of colloidal or sol-gel silica particles. The volumeporosity of the colloidal or sol-gel silica particles can vary from0.01% to 60%, while the volume porosity of the fumed agglomerates canvary from 10% to 99.99%.

Slurries having disclosed mixed particle types have several advantagescompared to conventional single type (unmixed) slurry particles. Forexample, by mixing particles of sol-gel or colloidal silica with fumedparticles, the particle size distribution is widened. This is recognizedto increase the polydispersity of the slurry particles. A wide particlesize distribution has been recognized to increase the packing ofparticles when the mixed particle slurry is fed onto the pad on the CMPmachine, which increases the number of polishing particles interactingwith the alumina surface. This results in higher polishing ratescompared to conventional unmixed slurry particles.

Additionally, by mixing sol-gel or colloidal silica particles with fumedoxide particles in the slurry, the higher surface area of fumedparticles compared to the sol-gel and colloidal silica particles alsoresults in also a higher number of polishing sites interacting with thealumina (e.g., sapphire) surface, thus leading to higher polishingrates. Moreover, as fumed particles have a non-spherical surface with Dfvalues between 1.5 to 2.6, the addition of these particles can increaselocal pressure during the polishing process. The electrical conductivityof mixed particle-based silica slurries using colloidal silica and fumedsilica can range from 0.2 milliSiemens (mS) to 7 mS. One electricalconductivity range is between 0.5 mS to 2.5 mS.

As noted above, the core or coated particles or mixed particles can be amix of 2 or more size distributions. For example, 200 nm (mean size)silica core particles can be mixed with particles having a mean size of50 nm or less, or 100 nm mean size core particles can be mixed with coreparticles having a mean size of 75 nm or less. The mixing ratio (byweight) of the larger to smaller particle types can vary of 1:20 to100:1. The mixing size ratio (by weight) between larger and smallerparticle types can vary from 1 to 1.2 to 1:200. The weight ratio ofmixing between large and small particles can vary from 100:1 to 1:100.As noted above, by mixing larger and smaller particle types the packingof the particles can be increased as particles can more efficientlyoccupy interstitial spaces and thus more particles will be interactingwith the alumina surface during the polishing process, and this willgenerally lead to increase in removal in rates during polishing.

Another disclosed embodiment polishes sapphire (e.g., a-plane, c-plane,r plane) with a slurry including mixed particle types with differentsurface groups and different surface areas. For example, silicaparticles of different surface areas per unit mass varying from 10 m²/gto 1000 m²/gm can be used. As another example, a colloidal silica slurrymade by the sodium silicate process can be mixed with at least one fumedsilica or other metals oxides (alumina, titania, iron oxide ortransition metal oxide) formed by a vapor phase (fumed) process. Thecolloidal silica can have surface area per unit mass varying from 10m²/gm to 200 m²/gm while the fumed silica can have surface area per unitmass varying from 50 m²/gm to 600 m²/gm. The surface area per unit massratio of colloidal particles to fumed oxides particle can vary from 0.05to 10. The concentration of each particle type can vary from 0.1 wt. %to 40 wt. %. By mixing different particle types the polydispersity ofthe particles in the slurry can be increased leading to increasedremoval rate of sapphire.

Another embodiment for polishing alumina (e.g., sapphire) of any faceuses mixed particle types of given surface groups. More specificallythis embodiment includes polishing with a mixture of hydrophobic andhydrophilic groups. Examples of surface groups in silica include silanolgroups, siloxane (organic), vicincal or germinal silica groups Surfacegroups with —OH (silanol) groups are typically hydrophilic, whilesiloxane groups (organic) are typically hydrophobic. In an example mixedsilica particle system, at least 2% of the surface groups have anorganic surface modification.

Another disclosed embodiment comprises the slurry having a widedistribution of particle size. FIG. 1 depicts an example slurry particlesize distribution (PSD) 100 showing a disclosed polydispersity inparticle size, according to an example embodiment. PSD 100 is based onthe volume distribution (not the number distribution). The width of theparticle distribution can be defined by the distribution width (w) withw₁ and w₂ shown defining the bounds of w (=w₂−w₁). The average particlesize is shown as d_(av). The value “(d_(av)−w₁)” can define the lowerwidth of particle size distribution which contains 31.5% of the volumeof particles compared to total particles in the slurry by volume. Thevalue “(w₂−d_(av))” defines the upper width of PSD 100 which can contain31.5% of the particles (compared to total particles) by volume. Thuswithin the range (w₂−w₁), the slurry contains 63% of the particlescompared to total particles by volume. If the PSD is symmetrical it isexpected that (d_(av)−w1)=(w2−d_(av)).

The distribution of the core, coated or mixed particle types can have apolydispersity defined by (w2−w1)×100/d_(av) with a polydispersity valuethat lies between 5% and 200%. Disclosed embodiments include apolydispersity value between 10% and 200%, and a polydispersity value ofat least 30%, such as between 30% and 200%. It is recognized by having abroad distribution in particle size (a polydispersity value ≧5%, such asa value ≧30%) leads to better packing of the particles thus increasingthe alumina/sapphire CMP removal rate.

The slurry's liquid phase may contain single, double or triple chargedanions and cations. Examples of singly charged ions include alkali metalions such as sodium, potassium, ammonium, halide, carbonate, andsulfate. The concentration of the ions can vary from 5 ppm to 5 wt. %.Single charged cations, and single and double charged anions can providebetter performance compared to other ionic species because it isrecognized higher charged ions (ion charges >1) can destabilize theslurry. Increasing the concentration of ions to a particular value candecrease the electrostatic repulsion double layer, thus helping toenhance the CMP removal rate. However, a high concentration of ions (>5wt. %) can cause destabilization of the slurry. The electronicconductivity of the slurry which is a measure of ion concentrationshould generally not exceed 10 mS. The electrical conductivity of silicaparticles with polydispersity greater than 20% can range from 0.2 mS to7 mS. One example range of electrical conductivity is between 0.5 mS to2.5 mS.

The slurry can also contain one or more surfactants. The surfactants canbe non-ionic, anionic, cationic, zwitterionic or amphoteric. Theconcentration range for surfactants can be from 0.01 gm/liter to 30gm/liter. The slurry can also include one or more oxidizers with aconcentration of 0.01 gm/liter to 100 gm/liter, such as 10 gm/liter to100 gm/liter. The use of oxidizers for particle coating can help incontrolling the ionic strength and also some other helpful effects suchas improving the particle stability, and modulating the friction duringpolishing. A low concentration of oxidizers can breakdown within theslurry and coat the surface of the core particles with insolublecompounds which can help in reducing friction and increasing the CMPremoval rate. In addition, some oxidizers can act as a fungicide toreduce organic growth if the slurry is stored for an extended period oftime. Examples of oxidizer include per-compounds. The concentration ofoxidizers can vary from 0.01 gm/liter to 100 gm/liter, such as 2gm/liter to 50 gm/liter.

The oxidizer can comprise a per-compound. A per-compound is a compoundthat includes an element in its highest oxidation state. Theper-compound can include peroxides such as hydrogen peroxide, ammoniumcerium nitrate, periodates, periodic acid, iodates, persulfates,chromates, permanganates, ferricyanides, bromates, perbromates,ferrates, perrhenates, or perruthenates.

The slurry can also include pH stabilizers. Both organic and inorganicpH stabilizers can be used. Examples of inorganic pH stabilizers includephosphate, phthalates, bicarbonates, silicates. Examples of organic pHstabilizers include amines, glycine, N-Cyclohexyl-2-aminoethanesulfonicacid.

As noted above, the slurry can also include a fungicide. Examples offungicides include tetramethylammonium chloride, tetraethylammoniumchloride, tetrapropylammonium chloride, alkylbenzyldimethylammoniumchloride, and alkylbenzyldimethylammoniumhydroxide, 3,5-di-methyltetrahydro 1,3,5,2H-thiadiazine-2 thione, 2-methyl-4-isothiazolin-3-oneand 5-chloro-2-methyl-4-isothiazolin-3-one, sodium chlorite and sodiumhypochlorite.

The polishing process can be performed at a temperature of from 15° C.to 100° C. Higher temperatures are expected to increase the polishingrate of sapphire and related alumina compounds. One temperature range is25° C. to 65° C. Disclosed coated particles are generally more suitablefor a higher temperature range because they are expected to be morestable, and if they have a higher reactivity surface, the CMP removalrate at higher temperatures is expected to significantly increase. Oneway to reach a higher temperature is to preheat the slurry before beingsupplied to the CMP apparatus.

Regarding the polishing pad, any type of polymer-based polishing pad cangenerally be used. Examples of polishing pads are based on polyurethanepads and suede pads. The pad thickness can vary from 0.1 mm to 25 mm.The hardness of the suede pads can vary from Asker C hardness of 5 toAsker Hardness of 95. The compressibility of the suede pad can be from0.1% to 40%. The pore size of the suede poromeric pads can vary from 2microns to 100 microns with the size in the range of 20 to 60 microns inone embodiment. The poromeric pad layer can have a backing pad layer ofpoly(ethylene terephthalate) (PET), or foam or non-woven material withthickness between 30 microns to 25 mms. Poromeric suede pads areexpected to have positive charge at pH 7 to 10 can be used. The positivecharged surfaces can attract negatively charged particles such as mixedsilica or coated silica particles which can increase the number ofparticles interacting with the alumina (e.g., sapphire) surface. This isexpected to lead to higher CMP removal rates.

Besides use of poromeric pads, polyurethane pads can be used. Examplesof polyurethane based pads include D-100 pads from CabotMicroelectronics, IC and Suba Series from Dow Electronics Materials. Thehardness of these pads range from Shore D value of 5 to 99. The porosityof such pads can vary from 0.1% to 40%. It is noted that generally anyother type of polymeric material can be used with the slurry. Besidesthe use of poromeric pads, metal pads (such as cast iron, copper, tin),granite, or resin surfaces can be also used as pads.

FIG. 2 is a flow chart that shows steps in an example CMP method 200,according to an example embodiment. Step 201 comprises providing aslurry including a plurality of first metal or semiconductor oxideparticles (first oxide particles) in water. The first oxide particlescan comprise silica, titania, or alumina. The pH of the slurry canoptionally be alkaline (pH>7), such as a pH from 7.1 to 14.

The slurry includes at least one particle feature selected from (i) thefirst oxide particles having a polydispersity exceeding 30%, (ii) acoating on the first oxide particles including Group I ions, Group IIions, transition metal oxide, or an organic material, (iii) the firstoxide particles mixed with fumed oxide particles, (iv) the first oxideparticles with average primary size >50 nm mixed with fumed oxideparticles having average primary size <25 nm, and (v) the first oxideparticles with a per surface area per unit mass <100 m²/gm mixed withanother oxide particle type having an average area per unit mass >150m²/gm. Step 202 comprises placing a substrate having an alumina (e.g.,sapphire) surface into a CMP apparatus having a rotating polishing pad.Step 203 comprises performing CMP with the rotating polishing pad usingthe slurry polishing the alumina surface.

EXAMPLES

Disclosed embodiments are further illustrated by the following specificExamples, which should not be construed as limiting the scope or contentof this Disclosure in any way.

Example 1

A colloidal silica-based slurry was used to polish sapphire substrates.The polishing was conducted on a single sided polisher with a pressureof 7 psi and suede pads 12 inches in size with a rotation of 150 rpm ona Buehler table top polisher. Sapphire substrates of differentorientations (c-plane, a-plane and r-plane) were polished. The suedepads had a pore size in the range of 20 to 80 μm. The particle sizedistribution was determined using dynamic light scattering measurements.The % polydispersity was measured by calculating (w2−w1)/d_(av)×100 asdescribed above with data shown in Table 1 below.

The concentration of silica particles was measured using densitymeasurements. The friction during polishing was measured bycharacterizing the temperature increase during the polishing process.Based on the temperature increase under fixed mechanical loading(pressure and velocity), the friction was separated into 5 categorieswith alpha numeric characters with 5 being the highest friction and 1being the lowest friction. The silica particles were coated bytransition metal oxides (e.g. manganese oxides, copper oxide etc.) witha coating thickness of less than 1 micron such as 0.01 micron to almost1 micron. The coatings when used were discontinuous so that the bothcoating and silica particle had exposed surfaces (a silica surface andtransition metal oxide surface). The transition metal oxide coatingswere made by reducing the metallic salts in presence of colloidal silicaparticles. The defectivity on the sapphire surface after polishing wasmeasured by measuring the presence of scratches using an atomic forcemicroscope. The pH of the polishing slurry was 9.5.

TABLE 1 Avg. Polydis- De- size persity Conc. Orien- MRR Fric- fec- (nm)(%) Coating (wt. %) tation (nm/hr) tion tivity 50 20 none 3 c-plane 7606 Y 50 40 None 5 c-plane 980 4 Y 50 40 None 20 c-plane 3915 4 N 50 40MnO₂ 20 c-plane 4510 2 N 50 100 MnO₂ 20 c-plane 4950 1 N 50 40 None 45c-plane 2860 3 N 50 40 None 20 r-plane 1420 2 N 50 40 MnO₂ 20 a-plane970 2 N 50 40 None 20 a-plane 1290 4 N 50 80 None 20 a-plane 1530 3 N 8010 None 20 c-plane 3930 3 N 80 40 MnO₂ 20 c-plane 4940 1 N 80 40CuO/Cu₂O 20 c-plane 4560 2 Y 80 80 None 20 c-plane 4390 2 N 80 100 None20 c-plane 5470 1 N 140 40 None 20 a-plane 1840 3 N 140 40 MnO₂ 20a-plane 2130 1 N 140 80 None 20 c-plane 5200 2 N 140 150 None 20 a-plane2420 1 N 180 40 None 5 a-plane 2240 1 N

The results above in Table 1 evidence that increasing polydispersitysignificantly increases the removal rate for c-plane and a-planesapphire polishing. The presence of transition metallic oxide coatingsdecreased the friction during the polishing process. Similar resultswere obtained when the pH of the slurry was varied from 7.0 to 12.0, andwhen the concentration of particles varied from 1 wt. % to 50 wt. %. Thedensity of crystal defects was found to decrease with higherpolydispersity.

Example 2 Effect of Inorganic Material Coated Particles by Using Group Iand Group II Elements

This Example shows the role of silica particles with a compact bi-layerof Group I or Group II elements on polishing. For Group II coatings, thecoatings were formed by adding a salt of Group II metals. The coatingsof Group I and Group II were done by electrostatics as Group 1 (alkali)metals and Group 2 metals have a net positive charge which are attractedto the silica surface with has a new negative charge. The thickness ofthe coating layer of Group I and Group II was less than 10 nm such as 1nm to 4 nm. Examples of coatings made by this process include Group Ielements such as sodium and lithium, potassium, and Group II elementsincluded magnesium.

Salts can generally be of any form including nitrates, chlorides,carbonates, silicates, sulfates, phosphates that can have, single,double or triple charged anions. The compactness of the coating wasfound to depend on the atomic size of the cations. For example, Na⁺ ionhas an atomic size of 1 Å, while K⁺ ions has an atomic size of 1.4 Å, soit is expected that the K⁺ coating will be less compact than the Na⁺ ioncoating. The concentration of Group I and Group II ions in the slurrycan vary from 5 ppm to 2 weight %. It is noted that the slurrydispersion can be effected by the ion concentration. The slurry wascharacterized as stable or unstable depending on the concentration ofthe Group I and Group II ions.

For these experiments, a colloidal silica particle based slurry was usedto polish sapphire (c-plane, a-plane and r-plane) substrates. Thepolishing was conducted on a single sided polisher with pressure of 7psi and suede pad (12 inch size) with a rotation of 150 rpm on a Buehlertable top polisher. The suede pad had a pore size in the range of 20 to100 microns. 80 nm silica particles with a polydispersity of greaterthan 30% were used for the experiments. The pH of the slurry was kept at9 during the polishing process.

The stability of the slurries was visually measurements after adding theGroup I and Group II additives and waiting for 30 minutes to observewhether there was settling of the particles or an increase in theviscosity of the slurry. The results obtained in Table 2 below showedthat Group I additives increased the removal rate of both a-plane andc-plane sapphire substrates, with no substantial difference in stabilityof the slurry. In contrast, a higher amount of Group II additivessubstantially decreased the stability of the slurry. The unstableslurries also gave rise to defectivity on the sapphire surface (exampleMg²⁺ coated silica particles).

TABLE 2 Removal Type Concentration Orientation rate (nm/hr) StabilityNone 0 A-plane 960 Stable Na+ 0.003 wt %  a-plane 1540 stable K+ 0.0015wt %  a-plane 1150 stable Mg²⁺ 0.01 wt % c-plane 3110 not stableMnO₂/Na+ 0.05 wt % c-plane 4980 stable Li+ 0.15 wt % a-plane 1270 stableBa²⁺ 0.05 wt % a-plane 1010 stable

Example 3 Effect of Organic Coatings

Organic coatings on colloidal silica cores were evaluated for polishingperformance. As the colloidal silica particles are negatively charged,positively charged organic molecules were added so that a coating couldbe formed. Examples of positively charged ions include amines and othermolecules with a nitrogen atom. Other examples of positively chargedcompounds include ammonium ions, and TMAH (trimethyl ammonium hydroxide)with a concentration generally less than 0.1 M/liter. For theseexperiments, a colloidal silica based slurry was used to polish sapphire(c-plane and a-plane and r-plane) substrates. The polishing wasconducted on a single sided polisher with pressure of 7 psi and suedepad (12 inch size) with a rotation of 150 rpm on a Buehler table toppolisher. Sapphire substrates of different orientations were polished.The suede pad has a pore size in the range of 20 to 100 microns. 80 nmparticles with polydispersity of greater than 20% were used for theexperiments. The pH of the slurry was kept at 9 during the polishingprocess. The polydispersity of the colloidal silica particles wasgreater than 30%.

TABLE 3 Organic Removal Compound Concentration Orientation rate (nm/hr)Defectivity None 0% A-plane 960 N Methyl 0.01 wt % c-plane 4130 N amineTricine 0.0025 wt %  c-plane 4560 N Ethyl amine 0.01 wt % a-plane 1910 NThiazole 0.01 wt % c-plane 3810 N Pyrazole 0.01 wt % a-plane 2010 NEthyl amine 0.01 wt % r-plane 1780 N

The results in Table 3 above show that the sapphire removal rate wassignificantly increased compared to no organic additives. Furthermorethe surface defectivity was also improved (not shown in Table 3) whensuch additives were added. The surface roughness (Ra) decreased byapprox. 0.2 A (from 1.8 A to 1.6 A) when 0.01 wt. % of methyl amine wasadded.

Example 4 Effect of pH

In this polishing Example the pH of the slurry was varied from 7 to 12.For these experiments, a colloidal silica based slurry was used topolish sapphire (c-plane and a-plane and r-plane) substrates. Thepolishing was conducted on a single sided polisher with pressure of 7psi and suede pad (12 inch size) with a rotation of 150 rpm on a Buehlertable top polisher. Sapphire substrates of different orientations werepolished. The suede pad has a pore size in the range of 20 to 100microns. 80 nm particles with polydispersity of greater than 20% wereused for the experiments. The polydispersity of the colloidal silicaparticles was greater than 30%.

TABLE 4 Particle size Removal (nm) pH Orientation rate (nm/hr)Defectivity 80 7 a-plane 1530 N 80 9 a-plane 1850 N 80 12 a-plane 1215 N80 7 c-plane 3075 N 80 9 c-plane 4610 N 80 12 c-plane 5530 N 80 7r-plane 1650 N 80 9 r-plane 2120 N 80 12 r-plane 2530 N

The results shown in Table 4 evidence that a pH less than 9.0 shown at apH of 7 gave higher sapphire removal rates compared to higher pH, withno measured defectivity on the sapphire surface for any of the pHstested.

Example 5 Effect of Substrate Temperature and Slurry Recirculation

This Example evaluated the role of temperature and the effect ofrecirculation on polishing using an example slurry formulated withcoated particles of manganese oxide. For these experiments, a manganeseoxide coated colloidal silica based slurry was used to polish sapphire(c-plane and a-plane and r-plane) substrates. The polishing wasconducted on a single sided polisher with pressure of 7 psi and pad (12inch size) rotation of 150 rpm on a Buehler table top polisher. Sapphiresubstrates of different orientations were polished. A standard suede padwas used for the polishing process. The suede pad has a pore size in therange of 20 to 100 microns. 80 nm particles with polydispersity ofgreater than 20% were used for the experiments. The pH of the slurry waskept at 9.5 during the polishing process. The polydispersity of thecolloidal silica particles was greater than 30%.

TABLE 5 Particle size Substrate Removal (nm) Temperature Orientationrate (nm/hr) Defectivity 80 RT a-plane 1250 N 80 RT a-plane 1540 N 80 30a-plane 1830 N 80 45 a-plane 2370 N 80 60 a-plane 2850 N 80 RT c-plane3560 N 80 RT c-plane 4130 N 80 30 c-plane 4360 N 80 45 c-plane 4980 N 8060 c-plane 5860 N

The results in Table 5 evidence that increasing the temperature fromroom temperature (RT) to 60° C. results in a significant increase insapphire removal rate, while adding recirculation also increases thesapphire removal rate.

Example 6 Effect of Pad Material

The effect of different polishing pad materials were evaluated. Forthese experiments, colloidal silica based slurry was used to polishsapphire (c-plane and a-plane and r-plane) substrates. The polishing wasconducted on a single sided polisher with pressure of 7 psi and suedepad (12 inch size) rotation of 150 rpm on a Buehler table top polisher.Sapphire substrates of different orientations were polished. For thesuede pad runs a standard suede pad was used for the polishing process.The “non-suede” pad shown in Table 6 comprised polyurethane. 80 nmparticles with polydispersity of greater than 20% were used for theexperiments. The pH of the slurry was kept at 8.5 during the polishingprocess.

TABLE 6 Particle Pore Removal size size Rate (nm) Pad type (um)Orientation (nm/hr) Defectivity 80 Polyurethane >20 a-plane 810 Y 80Suede 50 a-plane 960 N 80 Suede 65 a-plane 1230 N 80 Suede 80 a-plane1980 N 80 Suede 100 a-plane 2010 N 80 Polyurethane >20 c-plane 1870 N 80Suede 50 c-plane 3370 N 80 Suede 65 c-plane 3860 N 80 Suede 80 c-plane4290 N 80 Suede 100 c-plane 5510 N 80 Suede 50 r-plane 1240 N 80 Suede80 r-plane 1570 N

A significant finding in this Example is that positively chargedpolishing pads such as suede poromeric pads with Asker C hardness lessthan 95 increase the removal rate of sapphire samples as compared topolyurethane pads. As the suede pads are positively charged, they canattract negatively charged particles, in this case silica particles thatare negatively charged.

Example 7 Used of Mixed Particle Types

The removal rate of sapphire (a plane and c plane) was monitored bypolishing on a Buehler polishing machine. The polishing pressure was 6psi and the rpm was 150. Slurries containing particles of differentcompositions were used. Colloidal silica made from sodium silicateprocess having particle size ranging from 10 nm to 180 nm, with theparticle concentration varying from 5 wt. % to 45 wt. %, and surfacearea varying from 30 m²/gm to 200 m²/gm were mixed with differentparticles (sol-gel silica with particle size varying from 50 nm to 2microns, fumed silica with aggregate particle size less than 200 nm andsurface area varying from 50 m²/gm to 600 m²/gm, fumed titania, fumedand colloidal alumina particles). The pH of the slurry was varied from 7to 12. The weight ratio of the non-colloidal particles to colloidalparticles was varied between 0.1 wt. % to 30 wt. %, mixing colloidalsilica particles with fumed particles with characteristic fractaldimension D_(f) between 1.5 to 2.8. The primary average particle size ofthe fumed oxide particles were less than 50 nm, while the average sizeof the agglomerate was less than 500 nm.

TABLE 7 Colloidal Silica (mean Remov- De- size and con- 2nd Orien- alfec- Fric- centration) particle pH tation Rate tivity tion 80 nm 20%None 8.0 c-plane 1230 N 3 particle 80 nm 20% None 8.0 A-plane 330 N 2particle 80 nm 15% 3% fumed 10.5 A-plane 450 N 4 particle silica Surfacearea 300 m²/gm 80 nm 15% 13% fumed 8.0 A-plane 420 N 4 particle silica90 m²/gm 80 nm 15% 1% fumed 8.0 A-plane 370 N 4 particle silica Df = 1.9to 2.5 130 nm 1% fumed 8.0 A-plane 420 N 4 fumed 6% silica with Df = 1.9to 2.5 130 nm 3% Fumed 9.0 A-plane 270 Y 3 fumed 6% Alumina Df = 1.9-2.5120 nm 10% fumed 11.0 c-plane 1560 N 4 sol-gel silica silica Alumina 80nm 0 10.8 A-plane 300 N 4 sol-gel silica 80 nm 2.5% fumed 10.6 A-plane420 N 4 sol-gel silica silica primary particle <50 nm

The results shown in Table 7 above evidence that the removal rate andthe friction during polishing (measured by temperature rise) increasedsubstantially when fumed silica particles were mixed with colloidalsilica particles. The addition of fumed silica particles did notincrease the defectivity of the polished sapphire samples.

While various embodiments of the invention have been described above, itshould be understood that they have been presented by way of exampleonly, and not limitation. Numerous changes to the disclosed embodimentscan be made in accordance with this Disclosure without departing fromthe spirit or scope of the subject matter disclosed herein. Thus, thebreadth and scope of this Disclosure should not be limited by any of theabove described embodiments. Rather, the scope of this Disclosure shouldbe defined in accordance with the following claims and theirequivalents.

1. A method of chemical mechanical polishing (CMP), comprising:providing a slurry including: a plurality of first metal oxide orsemiconductor oxide particles (first oxide particles) in water, at leastone particle feature selected from: (i) said plurality of first oxideparticles having a polydispersity >30%; (ii) a coating on said pluralityof first oxide particles including at least one of Group I ions, GroupII ions, a transition metal oxide, and an organic material; (iii) mixedparticle types comprising said plurality of first oxide particles mixedwith another oxide particle type including fumed oxide particles; (iv)said mixed particle types comprising said plurality of first oxideparticles with average primary particle size >50 nm mixed with saidfumed oxide particles having an average primary particle size <25 nm,and (v) said mixed particle types comprising said plurality of firstoxide particles with a per surface area per unit mass <100 m²/gm mixedwith said another oxide particle type having an average area per unitmass >150 m²/gm; placing a substrate having an alumina surface into aCMP apparatus having a rotating polishing pad, and performing CMP withsaid rotating polishing pad and said slurry to polish said aluminasurface.
 2. The method of claim 1, wherein said particle featureincludes said (i) and said (ii).
 3. The method of claim 1, wherein saidalumina substrate comprises sapphire, doped sapphire, or AlON.
 4. Themethod of claim 1, wherein said polishing pad comprises apolymeric-based polishing pad.
 5. The method of claim 1, wherein saidfirst oxide particles comprise silica, and said another oxide particletype comprises silica.
 6. The method of claim 1, wherein a pH of saidslurry is >7.
 7. The method of claim 1, wherein said particle featureincludes said organic material, and wherein said organic materialcomprises a nitrogen-based organic compound.
 8. The method of claim 1,wherein said first oxide particles comprise colloidal particles in saidwater.
 9. A chemical mechanical polishing (CMP) slurry, comprising: aplurality of first metal oxide or semiconductor oxide particles (firstoxide particles) in water, at least one particle feature selected from:(i) said plurality of first oxide particles having apolydispersity >30%; (ii) a coating on said plurality of first oxideparticles including at least one of Group I ions, Group II ions, atransition metal oxide, and an organic material; (iii) mixed particletypes comprising said plurality of first oxide particles mixed withanother oxide particle type including fumed oxide particles; (iv) saidmixed particle types comprising said plurality of first oxide particleswith average primary particle size >50 nm mixed with said fumed oxideparticles having an average primary particle size <25 nm, and (v) saidmixed particle types comprising said plurality of first oxide particleswith a per surface area per unit mass <100 m²/gm mixed with said anotheroxide particle type having an average area per unit mass >150 m²/gm. 10.The slurry of claim 9, wherein said particle feature includes said (i)and said (ii).
 11. The slurry of claim 9, wherein said wherein saidfirst oxide particles comprise silica, and said another oxide particletype comprises silica.
 12. The slurry of claim 9, wherein a pH of saidslurry is >7.
 13. The slurry of claim 9, wherein said particle featureincludes said organic material, and wherein said organic materialcomprises a nitrogen-based organic compound.
 14. The slurry of claim 9,wherein said first oxide particles comprise colloidal particles in saidwater.